Ong, E. W. H., & Ing, N. G. (2024). Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS). Nanyang Technological University.
استشهاد بنمط شيكاغوOng, Eugene Wei Han, و Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistor (HEMTS). Nanyang Technological University, 2024.
MLA استشهادOng, Eugene Wei Han, و Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistor (HEMTS). Nanyang Technological University, 2024.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.