Ong, E. W. H., & Ing, N. G. (2024). Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS). Nanyang Technological University.
Chicago Style CitationOng, Eugene Wei Han, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistor (HEMTS). Nanyang Technological University, 2024.
MLA CitationOng, Eugene Wei Han, and Ng Geok Ing. Studies of Gallium Nitride (GaN) Based High Electron Mobility Transistor (HEMTS). Nanyang Technological University, 2024.
Warning: These citations may not always be 100% accurate.