Zhang, J., & Yuanjin, Z. (2025). GaN HEMTs device modeling in high-power and high-frequency applications. Nanyang Technological University.
استشهاد بنمط شيكاغوZhang, Juncheng, و Zheng Yuanjin. GaN HEMTs Device Modeling in High-power and High-frequency Applications. Nanyang Technological University, 2025.
MLA استشهادZhang, Juncheng, و Zheng Yuanjin. GaN HEMTs Device Modeling in High-power and High-frequency Applications. Nanyang Technological University, 2025.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.