Lu, Y., & Weiguang, Z. (2008). High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics.
استشهاد بنمط شيكاغوLu, Yuekang, و Zhu Weiguang. High-k Hafnium Oxide Based Thin Films Using Laser Molecular Beam Epitaxy for Gate Dielectrics. 2008.
MLA استشهادLu, Yuekang, و Zhu Weiguang. High-k Hafnium Oxide Based Thin Films Using Laser Molecular Beam Epitaxy for Gate Dielectrics. 2008.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.