Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)

Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)

High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements...

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Main Author: Yang, Hong
Other Authors: K. Radhakrishnan
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:https://hdl.handle.net/10356/3833
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-38332023-07-04T16:57:14Z Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs) Yang, Hong K. Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:38:27Z 2008-09-17T09:38:27Z 2005 2005 Thesis Yang, H. (2005). Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs). Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3833 10.32657/10356/3833 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Yang, Hong
Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
description High gain metamorphic InP/InGaAs/InP DHBTs (double heterojunction bipolar transistors) on GaAs substrate fabricated using complete NTU in-house process have been demonstrated in this investigation. DC and RF characterization of various MHBTs (metamorphic HBTs), including noise and power measurements, elevated temperature and current stress measurements, evaluation of thermal resistance, and performance comparison of devices grown by different growth techniques have been accomplished. Other important tasks completed include new device design and mask layout, and development of two-micron or less emitter width device process technology.
author2 K. Radhakrishnan
author_facet K. Radhakrishnan
Yang, Hong
format Theses and Dissertations
author Yang, Hong
author_sort Yang, Hong
title Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_short Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_full Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_fullStr Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_full_unstemmed Fabrication and characterization of InP/InGaAs Metamorphic heterojunction bipolar transistors (HBTs)
title_sort fabrication and characterization of inp/ingaas metamorphic heterojunction bipolar transistors (hbts)
publishDate 2008
url https://hdl.handle.net/10356/3833
_version_ 1772826710664806400

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