Chandrasekaran, K., & Ruatagi, S. C. (2010). Nanoscale strained-Si/SiGe and double-gate MOSFET modeling.
Chicago Style CitationChandrasekaran, Karthik, and Subhash Chander Ruatagi. Nanoscale Strained-Si/SiGe and Double-gate MOSFET Modeling. 2010.
MLA引文Chandrasekaran, Karthik, and Subhash Chander Ruatagi. Nanoscale Strained-Si/SiGe and Double-gate MOSFET Modeling. 2010.
警告:這些引文格式不一定是100%准確.