Copper metallization for deep submicron integrated circuits
Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/4616 |
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| Institution: | Nanyang Technological University |
| Summary: | Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated. |
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