Copper metallization for deep submicron integrated circuits

Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal...

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Main Author:	Li, Chao Yong.
Other Authors:	Zhang, D. H.
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	http://hdl.handle.net/10356/4616
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4616
record_format	dspace
spelling	sg-ntu-dr.10356-46162023-07-04T15:59:05Z Copper metallization for deep submicron integrated circuits Li, Chao Yong. Zhang, D. H. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated. Doctor of Philosophy (EEE) 2008-09-17T09:55:22Z 2008-09-17T09:55:22Z 2003 2003 Thesis http://hdl.handle.net/10356/4616 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Li, Chao Yong. Copper metallization for deep submicron integrated circuits
description	Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated.
author2	Zhang, D. H.
author_facet	Zhang, D. H. Li, Chao Yong.
format	Theses and Dissertations
author	Li, Chao Yong.
author_sort	Li, Chao Yong.
title	Copper metallization for deep submicron integrated circuits
title_short	Copper metallization for deep submicron integrated circuits
title_full	Copper metallization for deep submicron integrated circuits
title_fullStr	Copper metallization for deep submicron integrated circuits
title_full_unstemmed	Copper metallization for deep submicron integrated circuits
title_sort	copper metallization for deep submicron integrated circuits
publishDate	2008
url	http://hdl.handle.net/10356/4616
_version_	1772826543354019840

Copper metallization for deep submicron integrated circuits

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