發送短信 : Characterizations of GaN-based high-electron-mobility-transistors (hemts)

  _____    _    _    _    _     _____     ____    
 |__  //  | || | || | \  / ||  |  ___||  |  _ \\  
   / //   | || | || |  \/  ||  | ||__    | |_| || 
  / //__  | \\_/ || | .  . ||  | ||__    | .  //  
 /_____||  \____//  |_|\/|_||  |_____||  |_|\_\\  
 `-----`    `---`   `-`  `-`   `-----`   `-` --`