Study of carbon nanotube field effect transistor using electrostatic force microscopy
As the silicon based metal-oxide-semiconductor field effect transistors quickly reaching the proposed 8 nm limit by 2022, it is necessary to search for solutions that can go beyond the 8 nm limit. One method is to substitute silicon with nanostrucutured materials. Carbon nanotube is a potential...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2012
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| 在線閱讀: | https://hdl.handle.net/10356/48023 |
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| 機構: | Nanyang Technological University |
| 語言: | English |