Ink-jet printed In-Ga-Zn oxide thin film transistors

• المؤلف الرئيسي: Wang, Ye.
• مؤلفون آخرون: Sun Xiaowei
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/52925

Metal-oxide semiconductor is advantageous in terms of high mobility and stability, and has received great attention for thin film transistors (TFTs) application. Recently, In-Ga-Zn oxide (IGZO) is deemed as a good alternative channel layer material for TFTs, compared to conventional a-Si and poly-Si...