Ink-jet printed In-Ga-Zn oxide thin film transistors
Metal-oxide semiconductor is advantageous in terms of high mobility and stability, and has received great attention for thin film transistors (TFTs) application. Recently, In-Ga-Zn oxide (IGZO) is deemed as a good alternative channel layer material for TFTs, compared to conventional a-Si and poly-Si...
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| 主要作者: | |
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| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2013
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/52925 |
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| 機構: | Nanyang Technological University |
| 語言: | English |