A new approach to power factor improvement at a 3-phase controlled rectifier at varying delay angles
This project presents a comparison of the features of different kind of IGBT and MOSFET HCC diode 3-phase Rectifier topologies under different controlling methods in order to improve the existing diode rectifiers performance. For the aspects of topologies, IGBT bidirectional switches have been test...
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| 主要作者: | |
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2013
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/54217 |
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| 總結: | This project presents a comparison of the features of different kind of IGBT and MOSFET HCC diode 3-phase Rectifier topologies under different controlling methods in order to improve the existing diode rectifiers performance. For the aspects of topologies, IGBT bidirectional switches have been test under the same condition as MOSFET bidirectional switches. On the other hand, different controlling methods such as changing TP(Triggering Pulse) frequency, TPCZP(Triggering Pulse Width Centered on the voltage Zero-crossing Point) Technique and STD(Switch-on Time Delay) technique have been adopted in the experiments. The results of TPCZP Technique is definitely positive, but other result is complex and differentiate from different kind of type of rectifier topology. The rectifier types tested in this project are limited, improvement methods recommended by this project can be applied for improving performance of other kind of topologies which suggested in John C.Salmon's paper[7]. There are still a lot of works need to be done. |
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