Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications

Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications

This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing paramet...

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Bibliographic Details
Main Authors: Yuan, Shu, Hing, Peter, Ooi, B. S., Zhang, Dao Hua, Chua, Soon Jun
Other Authors: School of Materials Science & Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/6777
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Institution: Nanyang Technological University
Description
Summary:This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing parameters involved in RTA and AOII and device performance of LEDs and laser diodes.

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