Goh, B. Y. K., & Engineering, S. o. E. a. E. (2016). Studies of gallium nitride high electron mobility transistors.
استشهاد بنمط شيكاغوGoh, Basil Yan Kun, و School of Electrical and Electronic Engineering. Studies of Gallium Nitride High Electron Mobility Transistors. 2016.
MLA استشهادGoh, Basil Yan Kun, و School of Electrical and Electronic Engineering. Studies of Gallium Nitride High Electron Mobility Transistors. 2016.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.