Gallium-Doped Tin Oxide Nano-Cuboids for Improved Dye Sensitized Solar Cell

• Main Authors: Teh, Jun Jie, Ting, Siong Luong, Leong, Kam Chew, Li, Jun, Chen, Peng
• Other Authors: School of Chemical and Biomedical Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: dye sensitized solar cell; tin oxide; gallium doping; nano-cuboid; band edge; charge recombination
• Online Access: https://hdl.handle.net/10356/82056; http://hdl.handle.net/10220/39752
• Institution: Nanyang Technological University

Tin dioxide (SnO2) is a potential candidate to replace conventional titanium dioxide (TiO2) in dye-sensitized solar cells (DSSCs) because of its wider bandgap and higher electron mobility. However, SnO2 suffers from low band edge that causes severe backflow of electrons towards electrolyte (charge recombination). Herein, we demonstrate that gallium (Ga) doping can increase the band edge of SnO2, and we show that DSSCs using a Ga-doped SnO2 nano-cuboids based photoanode offer improved open circuit potential (∼0.74 V), fill factor (∼73.7%), and power conversion efficiency (∼4.05%).