Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs
An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain cu...
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sg-ntu-dr.10356-821722019-12-06T14:47:59Z Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs Gu, Enyao Hu, Guangxi Xiang, Ping Liu, Ran Wang, Lingli Zhou, Xing School of Electrical and Electronic Engineering semiconductor analytical An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools. Published version 2016-08-16T06:40:42Z 2019-12-06T14:47:58Z 2016-08-16T06:40:42Z 2019-12-06T14:47:58Z 2014 Journal Article Xiang, P., Gu, E., Hu, G., Liu, R., Wang, L., & Zhou, X. (2014). Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs. Far East Journal of Electronics and Communications, 12(1), 39-48. 0973-7006 https://hdl.handle.net/10356/82172 http://hdl.handle.net/10220/41136 http://www.pphmj.com/abstract/8431.htm en Far East Journal of Electronics and Communications © 2014 Pushpa Publishing House. This paper was published in Far East Journal of Electronics and Communications and is made available as an electronic reprint (preprint) with permission of Pushpa Publishing House. The published version is available at: [http://www.pphmj.com/abstract/8431.htm]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 10 p. application/pdf |
| institution |
Nanyang Technological University |
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NTU Library |
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Singapore |
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DR-NTU |
| language |
English |
| topic |
semiconductor analytical |
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semiconductor analytical Gu, Enyao Hu, Guangxi Xiang, Ping Liu, Ran Wang, Lingli Zhou, Xing Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs |
| description |
An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained. The analytical model results are verified against simulations, good agreement is observed. The explicit expressions for drain current and subthreshold swing make the model suitable to be embedded in circuit simulation and design tools. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Gu, Enyao Hu, Guangxi Xiang, Ping Liu, Ran Wang, Lingli Zhou, Xing |
| format |
Article |
| author |
Gu, Enyao Hu, Guangxi Xiang, Ping Liu, Ran Wang, Lingli Zhou, Xing |
| author_sort |
Gu, Enyao |
| title |
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs |
| title_short |
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs |
| title_full |
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs |
| title_fullStr |
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs |
| title_full_unstemmed |
Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs |
| title_sort |
analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate finfets |
| publishDate |
2016 |
| url |
https://hdl.handle.net/10356/82172 http://hdl.handle.net/10220/41136 http://www.pphmj.com/abstract/8431.htm |
| _version_ |
1681044666809581568 |