A Simple Method for the Growth of Very Smooth and Ultra-Thin GaSb Films on GaAs (111) Substrate by MOCVD

• المؤلفون الرئيسيون: Ni, Pei-Nan, Tong, Jin-Chao, Tobing, Landobasa Y. M., Qiu, Shu-Peng, Xu, Zheng-Ji, Tang, Xiaohong, Zhang, Dao Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: GaSb on GaAs; Metal–organic chemical vapor deposition (MOCVD)
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83451; http://hdl.handle.net/10220/42611
• المؤسسة: Nanyang Technological University

We present a simple thermal treatment with the antimony source for the metal–organic chemical vapor deposition of thin GaSb films on GaAs (111) substrates for the first time. The properties of the as-grown GaSb films are systematically analyzed by scanning electron microscopy, atomic force microscop...