APA引文

Duan, T. L., Pan, J. S., Ang, D. S., & Engineering, S. o. E. a. E. (2019). Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure.

Chicago Style Citation

Duan, Tian Li, Ji Sheng Pan, Diing Shenp Ang, and School of Electrical and Electronic Engineering. Effect of Post-deposition Annealing On the Interface Electronic Structures of Al2O3-Capped GaN and GaN/AlGaN/GaN Heterostructure. 2019.

MLA引文

Duan, Tian Li, Ji Sheng Pan, Diing Shenp Ang, and School of Electrical and Electronic Engineering. Effect of Post-deposition Annealing On the Interface Electronic Structures of Al2O3-Capped GaN and GaN/AlGaN/GaN Heterostructure. 2019.