發送短信 : Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure

 ______     _____    _    _      ___    __    __  
|      \\  |  ___|| | \  / ||   / _ \\  \ \\ / // 
|  --  //  | ||__   |  \/  ||  / //\ \\  \ \/ //  
|  --  \\  | ||__   | .  . || |  ___  ||  \  //   
|______//  |_____|| |_|\/|_|| |_||  |_||   \//    
`------`   `-----`  `-`  `-`  `-`   `-`     `