Optical reset modulation in the SiO 2 /Cu conductive-bridge resistive memory stack

• المؤلفون الرئيسيون: Kawashima, Tomohito, Zhou, Yu, Yew, Kwang Sing, Ang, Diing Shenp
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Electrolytes; Electrodes
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/86881; http://hdl.handle.net/10220/44216

We show that the negative photoconductivity property of the nanoscale filamentary breakdown path in the SiO2 electrolyte of the SiO2/Cu conductive bridge resistive random access memory (CBRAM) stack is affected by the number of positive-voltage sweeps applied to the Cu electrode (with respect to a n...