A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance

• Main Authors: Wang, Bo, Zhou, Jun, Kim, Tony Tae-Hyoung
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Static Random Access Memory (SRAM); Dual-port
• Online Access: https://hdl.handle.net/10356/88027; http://hdl.handle.net/10220/44496
• Institution: Nanyang Technological University

Dual-port SRAMs with two sets of address bus and data IOs are widely employed in various applications to increase throughput. Conventional 8T dual-port SRAM suffers reliability issue at low voltages due to common-row-access disturbance. Specifically, a row is simultaneously accessed by two operation...