Lian, J., Zhang, D., Hong, R., Qiu, P., Lv, T., Zhang, D., & Engineering, S. o. E. a. E. (2018). Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films.
استشهاد بنمط شيكاغوLian, Jiqing, Dawei Zhang, Ruijin Hong, Peizhen Qiu, Taiguo Lv, Daohua Zhang, و School of Electrical and Electronic Engineering. Defect-induced Tunable Permittivity of Epsilon-near-zero in Indium Tin Oxide Thin Films. 2018.
MLA استشهادLian, Jiqing, et al. Defect-induced Tunable Permittivity of Epsilon-near-zero in Indium Tin Oxide Thin Films. 2018.
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