APA استشهاد

Lian, J., Zhang, D., Hong, R., Qiu, P., Lv, T., Zhang, D., & Engineering, S. o. E. a. E. (2018). Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films.

استشهاد بنمط شيكاغو

Lian, Jiqing, Dawei Zhang, Ruijin Hong, Peizhen Qiu, Taiguo Lv, Daohua Zhang, و School of Electrical and Electronic Engineering. Defect-induced Tunable Permittivity of Epsilon-near-zero in Indium Tin Oxide Thin Films. 2018.

MLA استشهاد

Lian, Jiqing, et al. Defect-induced Tunable Permittivity of Epsilon-near-zero in Indium Tin Oxide Thin Films. 2018.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.