Electrolyte gated oxide pseudodiode for inhibitory synapse applications

• المؤلفون الرئيسيون: Fu, Yang Ming, Wan, Chang Jin, Yu, Fei, Xiao, Hui, Tao, Jian, Guo, Yan Bo, Gao, Wan Tian, Zhu, Li Qiang
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Low Power Dissipation; Electric-double-layer Transistors; Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/90154; http://hdl.handle.net/10220/50471

Recently, synaptic electronics are attracting increasing attention in neuromorphic engineering. Here, inhibitory synapses are proposed based on nanogranular phosphorous silicate glass gated indium tin oxide transistors operated in pseudodiode mode. Activity dependent inhibitory synaptic behaviors ar...