APA استشهاد

Tseng, A. A., Liu, Y., Chen, T., Ng, C. Y., Ding, L., Tse, M. S., . . . Engineering, S. o. E. a. E. (2010). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures.

استشهاد بنمط شيكاغو

Tseng, Ampere A., Yang Liu, Tupei Chen, Chi Yung Ng, Liang Ding, Man Siu Tse, Stevenson Hon Yuen Fung, و School of Electrical and Electronic Engineering. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.

MLA استشهاد

Tseng, Ampere A., et al. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.