Tseng, A. A., Liu, Y., Chen, T., Ng, C. Y., Ding, L., Tse, M. S., . . . Engineering, S. o. E. a. E. (2010). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures.
استشهاد بنمط شيكاغوTseng, Ampere A., Yang Liu, Tupei Chen, Chi Yung Ng, Liang Ding, Man Siu Tse, Stevenson Hon Yuen Fung, و School of Electrical and Electronic Engineering. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.
MLA استشهادTseng, Ampere A., et al. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.
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