Tseng, A. A., Liu, Y., Chen, T., Ng, C. Y., Ding, L., Tse, M. S., . . . Engineering, S. o. E. a. E. (2010). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures.

Tseng, Ampere A., Yang Liu, Tupei Chen, Chi Yung Ng, Liang Ding, Man Siu Tse, Stevenson Hon Yuen Fung, and School of Electrical and Electronic Engineering. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.

Tseng, Ampere A., et al. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.