APA引文

Tseng, A. A., Liu, Y., Chen, T., Ng, C. Y., Ding, L., Tse, M. S., . . . Engineering, S. o. E. a. E. (2010). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures.

Chicago Style Citation

Tseng, Ampere A., Yang Liu, Tupei Chen, Chi Yung Ng, Liang Ding, Man Siu Tse, Stevenson Hon Yuen Fung, and School of Electrical and Electronic Engineering. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.

MLA引文

Tseng, Ampere A., et al. Influence of Si-nanocrystal Distribution in the Oxide On the Charging Behavior of MOS Structures. 2010.