Influence of oxygen pressure on the ferroelectric properties of epitaxial BiFeO3 thin films by pulsed laser deposition

• المؤلفون الرئيسيون: Yao, Kui, Chen, Lang, Wang, Junling, You, Lu, Chua, Ngeah Theng
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/91741; http://hdl.handle.net/10220/6862
• المؤسسة: Nanyang Technological University

The growth window of multiferroic BiFeO3 thin films is very small. Both temperature and oxygen pressure will affect the film quality and phase purity significantly. We demonstrate here that even within the window where phase pure BiFeO3 thin films can be obtained, different oxygen partial pressures...