Xu, S., Lai, M. Y., Yakovlev, N. L., Law, S. B., Chen, Z., Ee, E. Y. C., & Engineering, S. o. M. S. &. (2012). Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation.
استشهاد بنمط شيكاغوXu, S., M. Y. Lai, N. L. Yakovlev, S. B. Law, Z. Chen, Elden Yong Chiang Ee, و School of Materials Science & Engineering. Copper Diffusion in Ti–Si–N Layers Formed By Inductively Coupled Plasma Implantation. 2012.
MLA استشهادXu, S., et al. Copper Diffusion in Ti–Si–N Layers Formed By Inductively Coupled Plasma Implantation. 2012.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.