Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications

• Main Authors: Seng, H. L., Ho, V., Chan, Mei Yin, Lee, Pooi See
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/95024; http://hdl.handle.net/10220/8072

Ge nanocrystals embedded in lanthanide-based high-k dielectric (amorphous Lu2O3 in this work) were formed using pulsed laser deposition followed by rapid thermal annealing in N2 ambient. The formation and evolution of the Ge nanocrystals have been studied using transmission electron microscopy (TEM)...