Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications

• المؤلفون الرئيسيون: Seng, H. L., Ho, V., Chan, Mei Yin, Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95024; http://hdl.handle.net/10220/8072
• المؤسسة: Nanyang Technological University

Ge nanocrystals embedded in lanthanide-based high-k dielectric (amorphous Lu2O3 in this work) were formed using pulsed laser deposition followed by rapid thermal annealing in N2 ambient. The formation and evolution of the Ge nanocrystals have been studied using transmission electron microscopy (TEM)...