Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications
Ge nanocrystals embedded in lanthanide-based high-k dielectric (amorphous Lu2O3 in this work) were formed using pulsed laser deposition followed by rapid thermal annealing in N2 ambient. The formation and evolution of the Ge nanocrystals have been studied using transmission electron microscopy (TEM)...
Saved in:
| Main Authors: | , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2012
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/95024 http://hdl.handle.net/10220/8072 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|