Shang, Y., Fei, W., Yu, H., & Engineering, S. o. E. a. E. (2012). Analysis and modeling of internal state variables for dynamic effects of nonvolatile memory devices.
استشهاد بنمط شيكاغوShang, Yang, Wei Fei, Hao Yu, و School of Electrical and Electronic Engineering. Analysis and Modeling of Internal State Variables for Dynamic Effects of Nonvolatile Memory Devices. 2012.
MLA استشهادShang, Yang, Wei Fei, Hao Yu, و School of Electrical and Electronic Engineering. Analysis and Modeling of Internal State Variables for Dynamic Effects of Nonvolatile Memory Devices. 2012.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.