Dolmanan, S. B., Teo, S. L., Arulkumaran, S., Lin, V. K., Ng, G. I., Vicknesh, S., . . . Annual Device Research Conference (70th : 2012 : University Park, U. (2013). Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate.
استشهاد بنمط شيكاغوDolmanan, S. B., et al. Improved OFF-state Breakdown Voltage in AlGaN/GaN HEMTs Grown On 150-mm Diameter Silicon-on-insulator (SOI) Substrate. 2013.
MLA استشهادDolmanan, S. B., et al. Improved OFF-state Breakdown Voltage in AlGaN/GaN HEMTs Grown On 150-mm Diameter Silicon-on-insulator (SOI) Substrate. 2013.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.