Arulkumaran, S., Ng, G. I., Vicknesh, S., Wang, H., Ang, K. S., Tan, J. P. Y., . . . Engineering, S. o. E. a. E. (2013). Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate.
استشهاد بنمط شيكاغوArulkumaran, Subramaniam, et al. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-electron-mobility Transistors On 8-inch Si(111) Substrate. 2013.
MLA استشهادArulkumaran, Subramaniam, et al. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-electron-mobility Transistors On 8-inch Si(111) Substrate. 2013.
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