أرسل هذا في رسالة قصيرة: Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si(111) substrate

  _  _     ______    _____    _    _    _____    
 | \| ||  /_   _//  /  ___|| | || | || |  __ \\  
 |  ' ||   -| ||-  | // __   | || | || | |  \ || 
 | .  ||   _| ||_  | \\_\ || | \\_/ || | |__/ || 
 |_|\_||  /_____//  \____//   \____//  |_____//  
 `-` -`   `-----`    `---`     `---`    -----`