Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric

• المؤلفون الرئيسيون: Nguyen, Chien A., Mhaisalkar, Subodh Gautam, Ma, Jan, Lee, Pooi See
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Manufacturing::Polymers and plastics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/97215; http://hdl.handle.net/10220/10484

Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to att...