Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric

Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to att...

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Main Authors: Nguyen, Chien A., Mhaisalkar, Subodh Gautam, Ma, Jan, Lee, Pooi See
其他作者: School of Materials Science & Engineering
格式: Article
語言:English
出版: 2013
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在線閱讀:https://hdl.handle.net/10356/97215
http://hdl.handle.net/10220/10484
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機構: Nanyang Technological University
語言: English