Liu, W. J., Tran, X. A., Sun, X., Yu, H., & Engineering, S. o. E. a. E. (2013). A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode.
استشهاد بنمط شيكاغوLiu, W. J., Xuan Anh Tran, Xiaowei Sun, Hongyu Yu, و School of Electrical and Electronic Engineering. A Self-rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode. 2013.
MLA استشهادLiu, W. J., et al. A Self-rectifying Unipolar HfOx Based RRAM Using Doped Germanium Bottom Electrode. 2013.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.