Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule

• Main Authors: Li, Yongfeng, Yin, Wanjian, Deng, Rui, Chen, Rui, Chen, Jing, Yan, Qingyu, Yao, Bin, Sun, Handong, Wei, Su-Huai, Wu, Tom
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Published: 2013
• Online Access: https://hdl.handle.net/10356/98257; http://hdl.handle.net/10220/17569
• Institution: Nanyang Technological University

Although many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechanical rule severely constrains the optical applications of wide-bandgap oxides, which is also the reason why so few oxides enjoy the success of ZnO. Here, using SnO2 as an example, we demonstrate both theoretically and experimentally that UV photoluminescence and electroluminescence can be recovered and enhanced in wide-bandgap oxide thin films with ‘forbidden’ energy gaps by engineering their nanocrystalline structures. In our experiments, the tailored low-temperature annealing process results in a hybrid structure containing SnO2 nanocrystals in an amorphous matrix, and UV emission is observed in such hybrid SnO2 thin films, indicating that the quantum mechanical dipole-forbidden rule has been effectively overcome. Using this approach, we demonstrate the first prototypical electrically pumped UV-light-emitting diode based on nanostructured SnO2 thin films.