Realizing a SnO2-based ultraviolet light-emitting diode via breaking the dipole-forbidden rule
Although many oxide semiconductors possess wide bandgaps in the ultraviolet (UV) regime, currently the majority of them cannot efficiently emit UV light because the band-edge optical transition is forbidden in a perfect lattice as a result of the symmetry of the band-edge states. This quantum mechan...
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Main Authors: | , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Published: |
2013
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Online Access: | https://hdl.handle.net/10356/98257 http://hdl.handle.net/10220/17569 |
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Institution: | Nanyang Technological University |
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