發送短信 : AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 V and a complementary metal–oxide–semiconductor compatible gold-free process

  _  __    _____    __   _    _    _     _____   
 | |/ //  |  ___|| | || | || | || | ||  /  ___|| 
 | ' //   | ||__   | '--' || | || | || | // __   
 | . \\   | ||__   | .--. || | \\_/ || | \\_\ || 
 |_|\_\\  |_____|| |_|| |_||  \____//   \____//  
 `-` --`  `-----`  `-`  `-`    `---`     `---`