APA引文

Teo, K. L., Ng, G. I., Ranjan, K., Shoron, O. F., Arulkumaran, S., Rajan, S., . . . (IEDM), 2. I. I. E. D. M. (2015). In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V.

Chicago Style Citation

Teo, Khoon Leng, et al. In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs With Gm=646 MS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 MV/dec and DIBL=28 MV/V At VD=0.5 V. 2015.

MLA引文

Teo, Khoon Leng, et al. In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs With Gm=646 MS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 MV/dec and DIBL=28 MV/V At VD=0.5 V. 2015.