Fitzgerald, E. A., Tan, Y. H., Yew, K. S., Lee, K. H., Chang, Y., Chen, K., . . . Engineering, S. o. E. a. E. (2013). Al2O3 interface engineering of germanium epitaxial layer grown directly on silicon.
استشهاد بنمط شيكاغوFitzgerald, Eugene A., Yew Heng Tan, Kwang Sing Yew, Kwang Hong Lee, Yao-Jen Chang, Kuan-Neng Chen, Diing Shenp Ang, Chuan Seng Tan, و School of Electrical and Electronic Engineering. Al2O3 Interface Engineering of Germanium Epitaxial Layer Grown Directly On Silicon. 2013.
MLA استشهادFitzgerald, Eugene A., et al. Al2O3 Interface Engineering of Germanium Epitaxial Layer Grown Directly On Silicon. 2013.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.