LIM HUI FERN, M., & ENGINEERING, E. &. C. (2010). Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine.
استشهاد بنمط شيكاغوLIM HUI FERN, MICHELE, و ELECTRICAL & COMPUTER ENGINEERING. Analysis of Extended Defects in InGaAIP Grown By Metal-organic Chemical Vapour Deposition Using Tertiary- Butyl Phosphine. 2010.
MLA استشهادLIM HUI FERN, MICHELE, و ELECTRICAL & COMPUTER ENGINEERING. Analysis of Extended Defects in InGaAIP Grown By Metal-organic Chemical Vapour Deposition Using Tertiary- Butyl Phosphine. 2010.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.