LIM HUI FERN, M., & ENGINEERING, E. &. C. (2010). Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine.
Chicago Style CitationLIM HUI FERN, MICHELE, and ELECTRICAL & COMPUTER ENGINEERING. Analysis of Extended Defects in InGaAIP Grown By Metal-organic Chemical Vapour Deposition Using Tertiary- Butyl Phosphine. 2010.
MLA CitationLIM HUI FERN, MICHELE, and ELECTRICAL & COMPUTER ENGINEERING. Analysis of Extended Defects in InGaAIP Grown By Metal-organic Chemical Vapour Deposition Using Tertiary- Butyl Phosphine. 2010.
Warning: These citations may not always be 100% accurate.