LIM HUI FERN, M., & ENGINEERING, E. &. C. (2010). Analysis of extended defects in InGaAIP grown by metal-organic chemical vapour deposition using tertiary- butyl phosphine.
Chicago Style CitationLIM HUI FERN, MICHELE, and ELECTRICAL & COMPUTER ENGINEERING. Analysis of Extended Defects in InGaAIP Grown By Metal-organic Chemical Vapour Deposition Using Tertiary- Butyl Phosphine. 2010.
MLA引文LIM HUI FERN, MICHELE, and ELECTRICAL & COMPUTER ENGINEERING. Analysis of Extended Defects in InGaAIP Grown By Metal-organic Chemical Vapour Deposition Using Tertiary- Butyl Phosphine. 2010.
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