MING, Y., & PHYSICS. (2010). Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
استشهاد بنمط شيكاغوMING, YANG, و PHYSICS. Surface Passivation and High-k Dielectrics Integration of Ge-based FETs: First-principles Calculations and in Situ Characterizations. 2010.
MLA استشهادMING, YANG, و PHYSICS. Surface Passivation and High-k Dielectrics Integration of Ge-based FETs: First-principles Calculations and in Situ Characterizations. 2010.
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