MING, Y., & PHYSICS. (2010). Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.
Chicago Style CitationMING, YANG, and PHYSICS. Surface Passivation and High-k Dielectrics Integration of Ge-based FETs: First-principles Calculations and in Situ Characterizations. 2010.
MLA CitationMING, YANG, and PHYSICS. Surface Passivation and High-k Dielectrics Integration of Ge-based FETs: First-principles Calculations and in Situ Characterizations. 2010.
Warning: These citations may not always be 100% accurate.